The understanding of charge transport through metal-organic and/or organic-semiconductor interfaces plays a significant role in the further development and improvement of molecular electronics. This paper presents a theoretical investigation of hot electron transport through organic films grown on GaAs. Ballistic electron transport through Au/TiOPc/GaAs and Au/HBC/GaAs is described by means of the Bell-Kaiser model. Good agreement between experimental results and the prediction of the heterostructure extension of the Bell-Kaiser model is reported showing that the Bell-Kaiser model extension can be used to describe the hot electron transport through metal-organic-semiconductor nanostructures.