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International Journal of Micro-Nano Scale Transport>
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Volume 2, Issue 2-3>
DOI: 10.1260/1759-3093.2.2-3.117

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Using Native Inhomogeneity of Heterostructure to Decrease Dimensions of Planar Field-Effect Transistors

E. Pankratov Related information

1 Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia

DOI: http://dx.doi.org/10.1260/1759-3093.2.2-3.117

Published Online: October 23, 2012

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International Journal of Micro-Nano Scale Transport

International Journal of Micro-Nano Scale Transport

Print ISSN: 1759-3093

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